Formation of porous Ga<sub>2</sub>O<sub>3</sub>/GaAs layers for electronic devices
Yana Suchikova, Andriy Lazarenko, Сергій Ковачов, А. Usseinov, Zhakyp Karipbaev, Anatoli I. Popov
Abstract
The article presents a simple and cheap method to form a porous structure of Ga <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> O <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</inf> /GaAs on the surface of monocrystalline gallium arsenide. It is shown that two-stage etching in the nitric acid solution leads to massive etching pits as well as small pores on the surface. Ethanol added to the electrolyte solution in the second stage enables to form a passivating Ga <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> O <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</inf> layer. The obtained structures were investigated using SEM, EDX and Raman spectroscopy.