Highly efficient tin oxide‐based colloidal lead sulfide quantum dot solar cell
Ajay Kumar, Pushkar Gahlaut, Neha Gupta
Abstract
Abstract This work presents the assessment of tin oxide (SnO 2 ) electron transport layer (ETL)‐based quantum dot solar cell for improved efficiency (>20%). The proposed solar cell consists of a solid layer of lead sulfide (PbS) treated with PbS‐TBAI (tetrabutylammonium iodide) as absorber layer and PbS CQD treated with 1,2‐ethanedithiol (PbS‐EDT) as hole transport layer (HTL). The high level of efficiencies is achieved by varying the doping concentration of ETL and HTL, which affect the mobility of carriers (both electrons and holes). The optimization is carried out with a doping concentration (for ETL and HTL) of 1 × 10 19 cm −3 . The said doping reflected >20% conversion efficiency. PCE, fill‐factor (FF), V oc , and J sc were analyzed for all the performed variations.