Benchmarking of spin–orbit torque vs spin-transfer torque devices
Piyush Kumar, Azad Naeemi
Abstract
We present a comprehensive benchmarking for spin-transfer torque (STT) and spin–orbit torque (SOT) based random-access memories. Based on experimentally validated micromagnetic simulations along with the use of rare event enhancement techniques, we show various tradeoffs among the write error rate, write time, and write current. We consider both in-plane and perpendicular devices. For SOT driven perpendicular devices, we include various write mechanisms, such as field-assisted, STT-assisted, and switching due to out-of-plane spin torque, usually present in low symmetry materials.
Topics & Concepts
TorqueBenchmarkingSpin-transfer torqueSpin (aerodynamics)PerpendicularOrbit (dynamics)Symmetry (geometry)Condensed matter physicsPhysicsComputer scienceMagnetizationMagnetic fieldEngineeringAerospace engineeringQuantum mechanicsMathematicsThermodynamicsMarketingGeometryBusinessMagnetic properties of thin filmsAdvanced Memory and Neural ComputingFerroelectric and Negative Capacitance Devices