Photoluminescence and minority carrier lifetime of quinary GaInAsSbBi grown on GaSb by molecular beam epitaxy
Rigo A. Carrasco, Christian P. Morath, Julie V. Logan, Kevin B. Woller, Perry C. Grant, Haylie Orozco, Marko S. Milosavljevic, S. R. Johnson, Ganesh Balakrishnan, Preston T. Webster
Abstract
Quinary GaInAsSbBi is grown by molecular beam epitaxy, and the alloy is demonstrated with a bandgap energy of 291 meV (λcutoff ∼ 4.3 μm) and a minority carrier lifetime of 0.34 μs at 120 K. The GaInAsSbBi epilayer is grown to a thickness of 1 μm at 400 °C and lattice-matched to the GaSb substrate with a Bi mole fraction of 0.13% measured by Rutherford backscattering spectroscopy. Steady-state and time-resolved photoluminescence measurements are performed to gauge the comparative bandgaps and optical quality of GaInAsSbBi as well as InAsSbBi and GaInAsSb reference samples. A recombination rate analysis is performed on the low-injection temperature-dependent minority carrier lifetime to extract the Shockley–Read–Hall defect level and intrinsic doping concentration of the GaInAsSbBi.