In-depth Analysis of the Hafnia Ferroelectrics as a Key Enabler for Low Voltage & QLC 3D VNAND Beyond 1K Layers: Experimental Demonstration and Modeling
Giuk Kim, Hyojun Choi, Hunbeom Shin, Sang-Ho Lee, Sangmok Lee, Yunseok Nam, Minhyun Jung, Ilho Myeong, Kijoon Kim, Jongho Woo, Suhwan Lim, Kwangsoo Kim, Wanki Kim, Daewon Ha, Jinho Ahn, Sanghun Jeon
Abstract
In this work, we experimentally demonstrate a remarkable performance improvement, boosted by the interaction of charge trapping & ferroelectric (FE) switching effects in metal-band engineered gate interlayer (BE-G.IL)- FE-channel interlayer (Ch.IL)-Si (MIFIS) FeFET. The MIFIS with BE-G.IL (BE-MIFIS) facilitates the maximized ‘positive feedback’ (Posi. FB.) of dual effects, leading to low operation voltage (VPGM/VERS: +17/-15 V), a wide memory window (MW: 10.5 V) and negligible disturb at a biased voltage of 9 V. Furthermore, our proposed model verifies that the performance enhancement of the BE-MIFIS FeFET is attributed to the intensified posi. FB. This work proves that the hafnia FE can play as a key enabler in extending the technology development of 3D VNAND, which is currently approaching a state of stagnation.