Trap-assisted degradation mechanisms in E-mode p-GaN power HEMT: A review
Priyanka Nautiyal, Peyush Pande, Virender Kundu, Hamid Amini Moghadam
Topics & Concepts
High-electron-mobility transistorMaterials scienceOptoelectronicsGallium nitrideReliability (semiconductor)Threshold voltageDuty cycleTransistorPower semiconductor deviceVoltagePower (physics)Electrical engineeringElectronic engineeringNanotechnologyLayer (electronics)EngineeringPhysicsQuantum mechanicsGaN-based semiconductor devices and materialsSemiconductor materials and devicesSilicon Carbide Semiconductor Technologies