Enhanced Optical Emission from 2D InSe Bent onto Si‐Pillars
Debarati Mazumder, Jiahao Xie, Z. R. Kudrynskyi, Xinjiang Wang, O. Makarovsky, Mahabub Alam Bhuiyan, Hyunseok Kim, Ting‐Yuan Chang, Diana L. Huffaker, Z. D. Kovalyuk, Lijun Zhang, A. Patanè
Abstract
Abstract Controlling the propagation and intensity of an optical signal is central to several technologies ranging from quantum communication to signal processing. These require a versatile class of functional materials with tailored electronic and optical properties, and compatibility with different platforms for electronics and optoelectronics. Here, the inherent optical anisotropy and mechanical flexibility of atomically thin semiconducting layers are investigated and exploited to induce a controlled enhancement of optical signals. This enhancement is achieved by straining and bending layers of the van der Waals crystal indium selenide (InSe) onto a periodic array of Si‐pillars. This enhancement has strong dependence on the layer thickness and is modelled by first‐principles electronic band structure theory, revealing the role of the symmetry of the atomic orbitals and light polarization dipole selection rules on the optical properties of the bent layers. The effects described in this paper are qualitatively different from those reported in other materials, such as transition metal dichalcogenides, and do not arise from a photonic cavity effect, as demonstrated before for other semiconductors. The findings on InSe offer a route to flexible nano‐photonics compatible with silicon electronics by exploiting the flexibility and anisotropic and wide spectral optical response of a 2D layered material.