Resistive switching in graphene: A theoretical case study on the alumina-graphene interface
R. P. Maciel, Olle Eriksson, Y. O. Kvashnin, Danny Thonig, Daria Belotcerkovtceva, M. Venkata Kamalakar, Chin Shen Ong
Abstract
Neuromorphic computing mimics the brain's architecture to create energy-efficient devices. Reconfigurable synapses are crucial for neuromorphic computing, which can be achieved through memory-resistive (memristive) switching. Graphene-based memristors have shown nonvolatile multibit resistive switching with desirable endurance. Through first-principles calculations, we study the structural and electronic properties of graphene in contact with an ultra-thin alumina overlayer and demonstrate how one can use charge doping to exert direct control over its interfacial covalency, reversibly switching between states of conductivity and resistivity in the graphene layer. We further show that this proposed mechanism can be stabilized through the $p$-type doping of graphene, e.g., by naturally occurring defects, the passivation of dangling bonds or defect engineering.