Plan-view TEM observation of a single-domain <i>κ</i> -Ga <sub>2</sub> O <sub>3</sub> thin film grown on <i>ε</i> -GaFeO <sub>3</sub> substrate using GaCl <sub>3</sub> precursor by mist chemical vapor deposition
Hiroyuki Nishinaka, Osamu Ueda, Yusuke Ito, Noriaki Ikenaga, Noriyuki Hasuike, Masahiro Yoshimoto
Abstract
Abstract We demonstrated the growth of a single-domain κ -Ga 2 O 3 thin film on ε -GaFeO 3 by using an organic-free compound as a precursor for mist chemical vapor deposition. X-ray diffraction analysis revealed that an 86 nm thick κ -Ga 2 O 3 thin film was grown almost coherently with slight lattice relaxation. The surface morphology of the κ -Ga 2 O 3 thin film exhibited a step-terrace structure without island growth. Furthermore, plan-view TEM observations revealed that the κ -Ga 2 O 3 thin film grown on ε -GaFeO 3 had a single domain, whereas the previously reported κ -Ga 2 O 3 thin film grown on AlN template had a domain structure.
Topics & Concepts
Thin filmMaterials scienceChemical vapor depositionDiffractionSubstrate (aquarium)CrystallographySingle crystalAnalytical Chemistry (journal)MineralogyOpticsChemistryNanotechnologyGeologyPhysicsChromatographyOceanographyGa2O3 and related materialsAdvanced Photocatalysis TechniquesZnO doping and properties