Variable temperature probing of minority carrier transport and optical properties in <i>p</i>-Ga2O3
Sushrut Modak, Leonid Chernyak, Alfons Schulte, Corinne Sartel, Vincent Sallet, Yves Dumont, E. Chikoidze, Xinyi Xia, F. Ren, S. J. Pearton, A. Ruzin, Д. М. Жигунов, S. S. Kosolobov, Vladimir P. Drachev
Abstract
Electron beam-induced current in the temperature range from 304 to 404 K was employed to measure the minority carrier diffusion length in metal–organic chemical vapor deposition-grown p-Ga2O3 thin films with two different concentrations of majority carriers. The diffusion length of electrons exhibited a decrease with increasing temperature. In addition, the cathodoluminescence emission spectrum identified optical signatures of the acceptor levels associated with the VGa−–VO++ complex. The activation energies for the diffusion length decrease and quenching of cathodoluminescence emission with increasing temperature were ascribed to the thermal de-trapping of electrons from VGa−–VO++ defect complexes.