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Simultaneously elevating the resistive switching level and ambient-air-stability of 3D perovskite (TAZ-H)PbBr3-based memory device by encapsulating into polyvinylpyrrolidone

Kaiyue Song, Lingling Du, Guoli Yue, Tao Li, Hao‐Hong Li, Shou‐Tian Zheng, Zhi‐Rong Chen, Huidong Zheng, Zhi‐Rong Chen, Huidong Zheng

2023Journal of Colloid and Interface Science15 citationsDOI

Topics & Concepts

Ternary operationPerovskite (structure)Materials sciencePolyvinylpyrrolidoneResistive touchscreenChemical engineeringOptoelectronicsNanotechnologyChemistryCrystallographyPolymer chemistryElectrical engineeringComputer scienceEngineeringProgramming languagePerovskite Materials and ApplicationsAdvanced Memory and Neural ComputingConducting polymers and applications
Simultaneously elevating the resistive switching level and ambient-air-stability of 3D perovskite (TAZ-H)PbBr3-based memory device by encapsulating into polyvinylpyrrolidone | Litcius