Atomic-level flatness on oxygen-free copper surface in lapping and chemical mechanical polishing
Dongdong Liu, Zhenyu Zhang, Jiajian Feng, Zhibin Yu, Fanning Meng, Guanghong Xu, Jianmei Wang, Wei Wen, Wei Liu
Abstract
. Atomic-level flatness on the oxygen-free copper surface was acquired, which has never been reported before. Moreover, the mechanical removal mechanism of abrasive particles and the chemical reactions during lapping and CMP are proposed in detail. The thickness and composition of the damaged layer after lapping and polishing were analyzed. The lapping-damaged layer consists of a lattice distortion region, moiré fringes, grain boundary, superlattice and edge dislocations, and the polishing-damaged layer contains a handful of stacking faults with single-layer or multi-layer atoms. The chemical action involves three reactions: oxidation, corrosion and chelation. The processing method and its mechanistic explanation pave the way for the fabrication of high-performance OFC surfaces for use in vacuum, aerospace, military and electronic industries.