Size effect of the Ge2Sb2Te5 cell atop the silicon nitride O-ring resonator on the attenuation coefficient
Petr Lazarenko, Vadim Kovalyuk, P An, A. I. Prokhodtsov, Alexander Golikov, Aleksey Sherchenkov, S. A. Kozyukhin, Ilia M. Fradkin, G. Chulkova, Gregory Goltsman
Abstract
We have studied transmission spectra of a silicon nitride O-ring resonator with a Ge2Sb2Te5 (GST) thin-film cover. We have performed numerical simulations of the transmission, absorption, reflection, and scattering for the GST cells of various thicknesses and lengths and have also measured transmission spectra O-ring resonators for GST cells of various length and phase states. An analysis of the changes in the Q-factors has enabled us to identify the region of the GST cells where light scattering and absorption dominate and find the size dependence of amorphous and crystalline GST attenuation coefficients. The demonstrated results pave the way to high energy-efficient on-chip devices of a small footprint that can be switched either optically or electrically.