Enhancement of Device Uniformity in IWO TFTs via RF Magnetron Co-Sputtering of In <sub>2</sub> O <sub>3</sub> and WO <sub>3</sub> Targets
Zihan Wang, Feilian Chen, Mingjun Zhang, Xiaoliang Zhou, Paramasivam Balasubramanian, Yan Yan, Meng Zhang
Abstract
In this letter, the cause of the poor uniformity in indium tungsten oxide (IWO) thin-film transistors (TFTs) is investigated. The significant fluctuation in tungsten (W) content, which results from the non-uniformity of the IWO target, is responsible. To solve this problem, RF magnetron co-sputtering of In2O3 and WO3 targets is adopted to eliminate the variation of W content, thereby achieving high-uniformity IWO TFTs with enhanced performance. This co-sputtering methodology could shed light on the pathways for mitigating the device uniformity challenges encountered in mass production settings, thus leading to substantial cost reductions.