InGaN-based blue and red micro-LEDs: Impact of carrier localization
Jeong‐Hwan Park, Markus Pristovsek, Dong‐Pyo Han, Bum-Joon Kim, S. M. Lee, Drew Hanser, Pritesh Parikh, Wentao Cai, Jong‐In Shim, Dong‐Seon Lee, Tae‐Yeon Seong, Hiroshi Amano
Abstract
Herein, we investigate micro-light-emitting diodes (μLEDs) ranging in size from 160 × 160 to 10 × 10 μm2 and report that the differences in the behavior of InGaN-based blue (∼460 nm) and red (∼600 nm) μLEDs are related to carrier localization. The external quantum efficiency (EQE) of blue μLEDs decreases with size regardless of sidewall conditions, whereas that of red μLEDs is insignificant due to carrier localization. Atomic probe tomography examination of 30%, 15%, and 7.5% indium-concentrated InGaN layers used in red μLEDs shows that higher indium concentrations result in greater indium fluctuations, which promote carrier localization and thus shorten the diffusion length of carriers. Finally, by observing the peak wavelength of electroluminescence and the current density at peak EQE for both blue and red μLEDs, we find that radiative recombination rate in μLEDs is likely to be chip size dependent.