Vertical Ion-Coupling Ga<sub>2</sub>O<sub>3</sub> TFT With Spatiotemporal Logic Encryption
Yanran Li, Honglin Song, Jie Jiang
Abstract
The security of critical hardware components is of great importance for spawning an era of an integrated circuit. Here, a vertical short-channel Ga2O3 thin-film transistor (TFT) is proposed for addressing such security threats. The device has an ultrashort channel of ~10 nm due to the vertical architecture. It not only operates well at a low voltage (2 V) with a reasonable current ON- OFF ratio ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${I}_{ \mathrm{\scriptscriptstyle ON}}/{I}_{ \mathrm{\scriptscriptstyle OFF}}$ </tex-math></inline-formula> ) ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$10^{{3}}$ </tex-math></inline-formula> ), but also realizes the spatiotemporal logic encryption by tuning the ion-coupling path. Moreover, the decryption function of AND logic can only be unlocked by reducing the distance between the gate and channel. Therefore, the proposed device can be regarded as a great step to realize safe electronics in the future.