Room temperature optically pumped GeSn microdisk lasers
Jérémie Chrétien, Quang Minh Thai, Marvin Frauenrath, Lara Casiez, A. Chelnokov, Vincent Reboud, Jean‐Michel Hartmann, M. El Kurdi, N. Pauc, V. Calvo
Abstract
GeSn alloys are promising materials for light emitters monolithically grown on silicon. In this work, we demonstrate room temperature (RT) lasing in a GeSn hetero-structure with 17.2% of Sn. We report a threshold of 3.27 MW cm−2 at 305 K with peak emission at 353 meV. We ascribe these improvements to a higher tin concentration in the GeSn active layer with lower Sn content barriers on each side and to a better thermal dissipation provided by an adapted pedestal architecture beneath the GeSn micro-disk. This outcome is a major milestone for a fully integrated group-IV semiconductor laser on Si.
Topics & Concepts
Lasing thresholdMaterials scienceOptoelectronicsLaserPedestalSiliconSemiconductorTinLayer (electronics)OpticsNanotechnologyWavelengthHistoryMetallurgyArchaeologyPhysicsPhotonic and Optical DevicesAdvanced Photonic Communication SystemsNeural Networks and Reservoir Computing