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Tailoring the Band Structure of Twisted Double Bilayer Graphene with Pressure

Bálint Szentpéteri, Peter Rickhaus, Folkert K. de Vries, Albin Márffy, Bálint Fülöp, Endre Tóvári, Kenji Watanabe, Takashi Taniguchi, Andor Kormányos, Szabolcs Csonka, Péter Makk

2021Nano Letters40 citationsDOIOpen Access PDF

Abstract

Twisted two-dimensional structures open new possibilities in band structure engineering. At magic twist angles, flat bands emerge, which gave a new drive to the field of strongly correlated physics. In twisted double bilayer graphene dual gating allows changing of the Fermi level and hence the electron density and also allows tuning of the interlayer potential, giving further control over band gaps. Here, we demonstrate that by application of hydrostatic pressure, an additional control of the band structure becomes possible due to the change of tunnel couplings between the layers. We find that the flat bands and the gaps separating them can be drastically changed by pressures up to 2 GPa, in good agreement with our theoretical simulations. Furthermore, our measurements suggest that in finite magnetic field due to pressure a topologically nontrivial band gap opens at the charge neutrality point at zero displacement field.

Topics & Concepts

Bilayer grapheneCondensed matter physicsElectronic band structureHydrostatic pressureBand gapPhysicsFermi levelMaterials scienceGrapheneElectronNanotechnologyQuantum mechanicsThermodynamicsGraphene research and applicationsTopological Materials and Phenomena2D Materials and Applications
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