Interfacial band bending and suppressing deep level defects <i>via</i> Eu-MOF-mediated cathode buffer layer in an MA-free inverted perovskite solar cell with high fill factor
Tahir Imran, Hafiz Sartaj Aziz, Tayyaba Iftikhar, Munir Ahmad, Haibing Xie, Zhenghua Su, Peiguang Yan, Zonghao Liu, Guangxing Liang, Wei Chen, Shuo Chen
Abstract
To solve the problem of deep-level surface defects, lead thiocyanate is utilized in FACsPbI 3 absorber. Additionally, a novel Eu-MOF was integrated into the buffer layer to regulate band alignment while impeding the hole backflow at the back cathode.
Topics & Concepts
CathodeBuffer (optical fiber)Layer (electronics)Materials sciencePerovskite (structure)BackflowBand bendingOptoelectronicsThiocyanatePerovskite solar cellBendingNanotechnologyComposite materialChemistryInorganic chemistryCrystallographyComputer scienceTelecommunicationsMechanical engineeringInletEngineeringPhysical chemistryPerovskite Materials and ApplicationsConducting polymers and applicationsOrganic Light-Emitting Diodes Research