Design of a high-sensitivity extended mid-wave infrared InAsSb-based nBn photodetector by utilizing barrier band engineering technique: an outstanding device for biosensing applications
Maryam Shaveisi, Peiman Aliparast
Topics & Concepts
Dark currentPhotodetectorResponsivityOptoelectronicsMaterials scienceHeterojunctionSpecific detectivityWavelengthBand offsetOpticsInfraredBand gapPhysicsValence bandAdvanced Semiconductor Detectors and MaterialsSemiconductor Quantum Structures and DevicesChalcogenide Semiconductor Thin Films