Interfacial Stability in Bi<sub>2</sub>Te<sub>3</sub> Thermoelectric Joints
Chun‐Hsien Wang, Hsien-Chien Hsieh, Zhen-Wei Sun, V.K. Ranganayakulu, Tian-Wey Lan, Yang-Yuan Chen, Ying-Yi Chang, Albert T. Wu
Abstract
Bismuth telluride (Bi2Te3)-based thermoelectric materials are well-known for their high figure-of-merit (zT value) in the low-temperature region. Stable joints in the module are essential for creating a reliable device for long-term applications. This study used electroless Co–P to prevent a severe interfacial reaction between the joints of solder and Bi2Te3. A thick and brittle SnTe intermetallic compound layer was successfully inhibited. The strength of the joints improved, and the fracture mode became more ductile; furthermore, there was no significant degradation of thermoelectric properties after depositing the Co–P layer after long-term aging. The result suggests that electroless Co–P could enhance the interfacial stability of the joints and be an effective diffusion barrier for Bi2Te3 thermoelectric modules.