Over 1% magnetoresistance ratio at room temperature in non-degenerate silicon-based lateral spin valves
Hayato Koike, Soobeom Lee, Ryo Ohshima, Ei Shigematsu, Minori Goto, Shinji Miwa, Yoshishige Suzuki, Tomoyuki Sasaki, Yuichiro Ando, Masashi Shiraishi
Abstract
To augment the magnetoresistance (MR) ratio of n-type non-degenerate Si-based lateral spin valves (Si-LSVs), we modify the doping profile in the Si layer and introduce a larger local strain into the Si channel by changing a capping insulator. The highest MR ratio of 1.4% is achieved in the Si-LSVs through these improvements, with significant roles played by a reduction in the resistance-area product of the ferromagnetic contacts and an enhancement of the momentum relaxation time in the Si channel.
Topics & Concepts
MagnetoresistanceMaterials scienceCondensed matter physicsDegenerate energy levelsSiliconFerromagnetismSpin (aerodynamics)DopingRelaxation (psychology)Spin valveOptoelectronicsPhysicsMagnetic fieldThermodynamicsSocial psychologyPsychologyQuantum mechanicsSemiconductor materials and devicesAdvancements in Semiconductor Devices and Circuit DesignQuantum and electron transport phenomena