Electrical transport properties and Kondo effect in La1−xPrxNiO3−δ thin films
Van Hien-Hoang, Nak-Kwan Chung, Heon‐Jung Kim
Abstract
Abstract The Kondo effect has been a topic of intense study because of its significant contribution to the development of theories and understanding of strongly correlated electron systems. In this work, we show that the Kondo effect is at work in La 1− x Pr x NiO 3−δ (0 ≤ x ≤ 0.6) thin films. At low temperatures, the local magnetic moments of the 3 d e g electrons in Ni 2+ , which form because of oxygen vacancies, interact strongly with itinerant electrons, giving rise to an upturn in resistivity with x ≥ 0.2. Observation of negative magnetoresistance, described by the Khosla and Fisher model, further supports the Kondo picture. This case represents a rare example of the Kondo effect, where Ni 2+ acts as an impurity in the background of Ni 3+ . We suggest that when Ni 2+ does not participate in the regular lattice, it provides the local magnetic moments needed to scatter the conduction electrons in the Kondo effect. These results offer insights into emergent transport behaviors in metallic nickelates with mixed Ni 3+ and Ni 2+ ions, as well as structural disorder.