Ruddlesden–Popper Tin‐Based Halide Perovskite Field‐Effect Transistors
Wonryeol Yang, Letian Dou, Huihui Zhu, Yong‐Young Noh
Abstract
Tin‐based halide perovskites garner attention as a promising semiconducting layer material for field‐effect transistors (FETs) owing to their lower effective mass than their lead‐based counterparts. However, they suffer from low ambient stability because Sn 2+ is readily oxidized to Sn 4+ in air. To address this issue, Ruddlesden–Popper (RP) perovskites featuring large organic cations emerge as promising materials for FETs. In this article, a comprehensive overview of the properties and advantages of RP‐phase tin‐based halide perovskites used in FETs are provided. Recent advancements in 2D and 2D/3D RP tin‐based perovskite FETs are examined, and challenges related to the fabrication of uniform large‐area films and strategies for improving ambient stability and operational durability are discussed. In this review article, the potential of RP perovskites for FET applications is emphasized and the need for further research to unlock their full potential is highlighted.