An Analytical Switching Loss Model for a SiC MOSFET and Schottky Diode Half-Bridge Based on Nonlinear Differential Equations
Anliang Hu, J. Biela
Abstract
An accurate analytical switching loss model for a SiC MOSFET and Schottky diode half-bridge for a wide operating range is proposed in this paper, which is based on nonlinear differential circuit equations including parasitics. In the model, nonlinear device characteristics are used, including the dynamic gate-drain capacitance and the transfer characteristics measured under real switching conditions. With the proposed model, the accuracy improvement by using measured characteristics instead of device data sheet information is analyzed. In addition, the impact of making different common assumptions/simplifications on the accuracy of switching loss models is evaluated.
Topics & Concepts
Schottky diodeMOSFETNonlinear systemHalf bridgeDiodeMaterials scienceBridge (graph theory)Electronic engineeringOptoelectronicsTopology (electrical circuits)Electrical engineeringPhysicsEngineeringTransistorVoltageCapacitorInternal medicineMedicineQuantum mechanicsSilicon Carbide Semiconductor TechnologiesElectromagnetic Compatibility and Noise SuppressionInduction Heating and Inverter Technology