Phase transitions and scale invariance in topological Anderson insulators
Bryan D. Assunção, Gerson J. Ferreira, Caio Lewenkopf
Abstract
We investigate disorder-driven transitions between trivial and topological insulator (TI) phases in two-dimensional (2D) systems. Our study primarily focuses on the Bernevig-Hughes-Zhang (BHZ) model with Anderson disorder, while other standard 2D TI models exhibit equivalent features. The analysis is based on the local Chern marker (LCM), a local quantity that allows for the characterization of topological transitions in finite and disordered systems. Our simulations indicate that disorder-driven trivial to topological insulator transitions are nicely characterized by ${\mathcal{C}}_{0}$, the disorder-averaged LCM near the central cell of the system. We show that ${\mathcal{C}}_{0}$ is characterized by a single-parameter scaling, namely, ${\mathcal{C}}_{0}(M,W,L)\ensuremath{\equiv}{\mathcal{C}}_{0}(z)$, with $z=[{W}^{\ensuremath{\mu}}\ensuremath{-}{W}_{c}^{\ensuremath{\mu}}(M)]L$, where $M$ is the Dirac mass, $W$ is the disorder strength, and $L$ is the system size, while ${W}_{c}(M)\ensuremath{\propto}\sqrt{M}$ and $\ensuremath{\mu}\ensuremath{\approx}2$ stand for the critical disorder strength and the critical exponent, respectively. Our numerical results are in agreement with a theoretical prediction based on a first-order Born approximation analysis. These observations lead us to speculate that the universal scaling function we have found is rather general for amorphous and disorder-driven topological phase transitions.