Multifunctional MoS<sub>2</sub> Transistors with Electrolyte Gel Gating
Binmin Wu, Xudong Wang, Hongwei Tang, Wei Jiang, Yan Chen, Zhen Wang, Zhuangzhuang Cui, Tie Lin, Hong Shen, Weida Hu, Xiangjian Meng, Wenzhong Bao, Jianlu Wang, Junhao Chu
Abstract
Abstract MoS 2 , one of the most valued 2D materials beyond graphene, shows potential for future applications in postsilicon digital electronics and optoelectronics. However, achieving hole transport in MoS 2 , which is dominated by electron transport, is always a challenge. Here, MoS 2 transistors gated by electrolyte gel exhibit the characteristics of hole and electron transport, a high on/off ratio over 10 5 , and a low subthreshold swing below 50 mV per decade. Due to the electrolyte gel, the density of electrons and holes in the MoS 2 channel reaches ≈9 × 10 13 and 8.85 × 10 13 cm −2 , respectively. The electrolyte gel‐assisted MoS 2 phototransistor exhibits adjustable positive and negative photoconductive effects. Additionally, the MoS 2 p–n homojunction diode affected by electrolyte gel shows high performance and a rectification ratio over 10 7 . These results demonstrate that modifying the conductance of MoS 2 through electrolyte gel has great potential in highly integrated electronics and optoelectronic photodetectors.