Skyrmion Brownian circuit implemented in continuous ferromagnetic thin film
Yuma Jibiki, Minori Goto, Eiiti Tamura, Jaehun Cho, S. Miki, Ryo Ishikawa, Hikaru Nomura, Titiksha Srivastava, Willy Lim, S. Auffret, C. Baraduc, H. Béa, Yoshishige Suzuki
Abstract
The fabrication of a circuit capable of stabilizing skyrmions is important for the realization of micro- to nano-sized skyrmion devices. Ultralow power Brownian computers have been theoretically proposed and are a promising example of a skyrmion-based device. However, such devices have not been realized as it would require skyrmions to be stabilized and easily movable within a circuit. Skyrmion circuits fabricated by the etching of ferromagnetic films often decrease the dipolar magnetic field stabilizing the skyrmions, thus preventing their formation. In this study, a skyrmion Brownian circuit has been implemented in a continuous ferromagnetic film with patterned SiO2 capping to stabilize the skyrmion formation. The patterned SiO2 capping controls the saturation field of the ferromagnetic layer and forms a wire-shaped skyrmion potential well, which stabilizes skyrmion formation in the circuit. Moreover, using this patterned SiO2 capping, we have implemented a Y-junction hub circuit exhibiting no pinning site at the junction, contrary to conventional etched hubs. Thus, this technique enables the efficient control of skyrmion-based memory and logic devices to move closer toward the realization of Brownian computers.