Growth of the orthorhombic phase and inhibition of charge injection in ferroelectric HfO2-based MFIS memory devices with a high-permittivity dielectric seed layer
Yan Zhang, Dao Wang, Jiali Wang, Chunlai Luo, Ming Li, Yushan Li, Ruiqiang Tao, Deyang Chen, Zhen Fan, Jiyan Dai, Guofu Zhou, Xubing Lu, Jun‐Ming Liu
Topics & Concepts
Materials scienceFerroelectricityDielectricOptoelectronicsNucleationMicrostructureOrthorhombic crystal systemPermittivityComposite materialCrystallographyChemistryOrganic chemistryCrystal structureFerroelectric and Negative Capacitance DevicesSemiconductor materials and devicesMXene and MAX Phase Materials