Monolithic β-Ga2O3 bidirectional dual-gate MOSFET
Pooja Sharma, Poulomi Chakrabarty, Prabhat Prajapati, Sera Sen, Saurabh Lodha
Abstract
We report a monolithic bidirectional dual-gate metal–oxide–semiconductor field-effect transistor fabricated on epitaxially grown β-Ga2O3, demonstrating efficient two-way conduction and blocking. It features two independently controlled gates and operates in four distinct modes, offering flexibility in managing current and voltage in the first and third quadrants. This versatility makes it ideal for various power conversion system applications. The device operates at a low negative threshold voltage (∼−2.4 V for both gates), with a zero turn-on drain voltage and an on-resistance of approximately 500 Ω· mm. It exhibits a high on/off current ratio of 107 in all three conducting modes. In the blocking mode, the device breakdown was measured to be higher than ± 400 V. The estimated breakdown field and power figure of merit for the device are 0.4 MV/cm and 2.1 MW/cm2, respectively.