Litcius/Paper detail

Epitaxial Ferroelectric HfO<sub>2</sub> Films: Growth, Properties, and Devices

Ignasi Fina, F. Sánchez

2021ACS Applied Electronic Materials140 citationsDOIOpen Access PDF

Abstract

About ten years after ferroelectricity was first reported in doped HfO2 polycrystalline films, there&#13;\nis tremendous interest in this material and ferroelectric oxides are once again in the spotlight of&#13;\nthe memories industry. Great efforts are being made to understand and control ferroelectric&#13;\nproperties. Epitaxial films, which have fewer defects and a more controlled microstructure than&#13;\npolycrystalline films, can be very useful for this purpose. Epitaxial films of ferroelectric HfO2 have&#13;\nbeen much less investigated, but after the first report in 2015 significant progress has been&#13;\nachieved. This review summarizes and discusses the main advances on epitaxial HfO2,&#13;\nconsidering growth, study of structural and ferroelectric properties, identification of the&#13;\nferroelectric phase, and fabrication of devices. We hope this review will help to researchers&#13;\ninvestigating epitaxial HfO2. It can also help extend the interest of the ferroelectric HfO2&#13;\ncommunity, now basically focused on polycrystalline samples, to epitaxial films.

Topics & Concepts

FerroelectricityEpitaxyMaterials scienceCrystalliteFabricationOptoelectronicsNanotechnologyEngineering physicsDielectricEngineeringLayer (electronics)MetallurgyMedicineAlternative medicinePathologyFerroelectric and Negative Capacitance DevicesSemiconductor materials and devicesMXene and MAX Phase Materials