High performance ferroelectric field-effect transistors for large memory-window, high-reliability, high-speed 3D vertical NAND flash memory
Giuk Kim, Sang-Ho Lee, Taehyong Eom, Taeho Kim, Minhyun Jung, Hunbeom Shin, Yeongseok Jeong, Myounggon Kang, Sanghun Jeon
Abstract
This article presents a 3D ferroelectric NAND flash memory with a wide MW, low operation voltage, fast PGM/ERS speed, and higher endurable cycles based on a HfZrO film that shows excellent ferroelectricity even at a relatively thick thickness.
Topics & Concepts
Materials scienceNAND gateFerroelectricityReliability (semiconductor)Flash (photography)TransistorOptoelectronicsFlash memoryNon-volatile memoryFerroelectric RAMVoltageElectrical engineeringLogic gateComputer scienceOpticsComputer hardwareDielectricEngineeringPhysicsQuantum mechanicsPower (physics)Ferroelectric and Negative Capacitance DevicesSemiconductor materials and devicesElectronic and Structural Properties of Oxides