Ice-assisted electron-beam lithography for MoS<sub>2</sub> transistors with extremely low-energy electrons
Guangnan Yao, Ding Zhao, Yú Hónɡ, Rui Zheng, Min Qiu
Abstract
Extremely low-energy electrons with an in situ formed protecting layer are beneficial to reduce damages in ice-assisted electron-beam lithography. MoS 2 field effect transistors with ohmic contacts have been successfully fabricated in this way.
Topics & Concepts
Materials scienceNanolithographyOptoelectronicsElectron-beam lithographyMolybdenum disulfideLithographyNanotechnologyTransistorCathode rayElectronLayer (electronics)Electron beam processingOhmic contactResistComposite materialFabricationElectrical engineeringEngineeringPhysicsPathologyAlternative medicineMedicineQuantum mechanicsVoltage2D Materials and ApplicationsNanowire Synthesis and ApplicationsGa2O3 and related materials