Manipulation of the electrical and memory properties of MoS<sub>2</sub> field-effect transistors by highly charged ion irradiation
Stephan Sleziona, Aniello Pelella, Enver Faella, Osamah Kharsah, Lucia Skopinski, André Maas, Yossarian Liebsch, Jennifer Schmeink, Antonio Di Bartolomeo, Marika Schleberger
Abstract
Field-effect transistors based on molybdenum disulfide (MoS 2 ) exhibit a hysteresis in their transfer characteristics, which can be utilized to realize 2D memory devices. Ion irradiation is used to manipulate the hysteresis.
Topics & Concepts
Molybdenum disulfideHysteresisTransistorIrradiationMaterials scienceIonOptoelectronicsField-effect transistorMolybdenumElectrical engineeringChemistryVoltageCondensed matter physicsPhysicsEngineeringComposite materialMetallurgyNuclear physicsOrganic chemistryAdvanced Memory and Neural Computing2D Materials and ApplicationsPerovskite Materials and Applications