Realization low resistivity of high AlN mole fraction Si-doped AlGaN by suppressing the formation native vacancies
Jiawei Yang, Yanhui Zhang, Degang Zhao, Ping Chen, Z.S. Liu, Feng Liang
Topics & Concepts
Electrical resistivity and conductivityDopingMaterials scienceMole fractionVacancy defectRealization (probability)Analytical Chemistry (journal)ChemistryOptoelectronicsCrystallographyElectrical engineeringPhysical chemistryMathematicsEngineeringStatisticsChromatographyGaN-based semiconductor devices and materialsSemiconductor materials and devicesGa2O3 and related materials