Ultralow-pressure-driven polarization switching in ferroelectric membranes
Xinrui Yang, Lu Han, Hongkai Ning, Shaoqing Xu, Bo Hao, Yi-Chi Li, Taotao Li, Yuan Gao, Shengjun Yan, Yueying Li, Chenyi Gu, Weisheng Li, Zhengbin Gu, Yingzhuo Lun, Yi Shi, Jian Zhou, Jiawang Hong, Xinran Wang, Di Wu, Yuefeng Nie
Abstract
Van der Waals integration of freestanding perovskite-oxide membranes with two-dimensional semiconductors has emerged as a promising strategy for developing high-performance electronics, such as field-effect transistors. In these innovative field-effect transistors, the oxide membranes have primarily functioned as dielectric layers, yet their great potential for structural tunability remains largely untapped. Free of epitaxial constraints by the substrate, these freestanding membranes exhibit remarkable structural tunability, providing a unique material system to achieve huge strain gradients and pronounced flexoelectric effects. Here, by harnessing the excellent structural tunability of PbTiO3 membranes and modulating the underlying substrate’s elasticity, we demonstrate the tip-pressure-induced polarization switching with an ultralow pressure (down to 0.06 GPa). Moreover, as an application demonstration, we develop a prototype non-volatile ferroelectric field-effect transistor integrated on silicon that can be operated mechanically and electrically. Our findings underscore the great potential of oxide membranes for utilization in advanced non-volatile electronics and highly sensitive pressure sensors. The authors realize low-pressure-driven polarization switching in PbTiO3 membranes by leveraging their structural tunability and substrate elasticity, enabling ferroelectric field-effect transistors on silicon, operatable mechanically and electrically.