Flexo-photoelectronic effect in n-type/p-type two-dimensional semiconductors and a deriving light-stimulated artificial synapse
Xiang Wang, Xin Zhou, Anyang Cui, Menghan Deng, Xionghu Xu, Liping Xu, Ye Yan, Kai Jiang, Liyan Shang, Liangqing Zhu, Jinzhong Zhang, Yawei Li, Zhigao Hu, Junhao Chu
Abstract
channels, recorded in realtime by a home-made technique of lighting Kelvin probe force microscopy (KPFM). The slow release of trapped carriers contributes to the photoconductance relaxation after illumination. Utilizing the photoconductance relaxation, a light-stimulated artificial synapse based on the flexo-photoelectronic effect of bent InSe has been achieved. Significantly, all the pair-pulse facilitation (PPF) behavior, spike frequency-dependent excitatory post-synaptic current (EPSC) and the transition from short-term memory (STM) to long-term memory (LTM) have been successfully realized in this artificial synapse. This work adds to the investigation of flexo-photoelectronic effects on 2D optoelectronics, and moves towards the development of 2D neuromorphic electronics.