Exceptional high temperature retention in Al0.93B0.07N films
Wanlin Zhu, Fan He, John Hayden, Jung In Yang, Pannawit Tipsawat, Jon‐Paul Maria, Susan Trolier‐McKinstry
Abstract
This paper reports the retention behavior for Al0.93B0.07N thin films, a member of the novel family of wurtzite ferroelectrics. Our experiments suggest that bipolar cycling of metal (Pt/W)/Al0.93B0.07N/W/Al2O3 film stacks first induced wake-up and then a region of constant switchable polarization. The films showed excellent retention of the stored polarization state. As expected, data retention was slightly inferior in the opposite state (OS) measurements. However, it is noted that even after 3.6 × 106 s (1000 h) at 200 °C, the OS signal margin still exceeded 200 μC/cm2. The predicted OS retention is 82% after 10 yr baking at 200 °C.
Topics & Concepts
Data retentionMaterials scienceThin filmPolarization (electrochemistry)Retention timeAnalytical Chemistry (journal)OptoelectronicsChemistryNanotechnologyChromatographyPhysical chemistryAcoustic Wave Resonator TechnologiesFerroelectric and Piezoelectric MaterialsSemiconductor materials and devices