Stability and gap states of amorphous In-Ga-Zn-Ox thin film transistors: Impact of sputtering configuration and post-annealing on device performance
Kosuke Takenaka, Shota Nunomura, Yasuhiko Hayashi, Hibiki Komatsu, Susumu Toko, Hitoshi Tampo, Yuichi Setsuhara
Topics & Concepts
Thin-film transistorAmorphous solidMaterials scienceAnnealing (glass)SputteringPhotocurrentOptoelectronicsThreshold voltageSputter depositionThin filmDensity of statesBand gapTransistorCondensed matter physicsVoltageChemistryNanotechnologyMetallurgyElectrical engineeringCrystallographyPhysicsLayer (electronics)EngineeringThin-Film Transistor TechnologiesSilicon and Solar Cell TechnologiesElectrical and Thermal Properties of Materials