2D MoTe<sub>2</sub> memristors for energy-efficient artificial synapses and neuromorphic applications
Rajwali Khan, Naveed ur Rehman, Sujith Kalluri, Sundaravadivel Elumalai, Appukuttan Saritha, Mahbubul Alam, Muhammad Ikram, Sherzod Abdullaev, Nasir Rahman, Sambasivam Sangaraju
Abstract
film-based memristor arrays attaining over 90% recognition accuracy in handwritten digit identification tests further demonstrates the devices' great scalability, stability, and incorporation capabilities. Notwithstanding these developments, issues such as poor environmental robustness, phase transition sensitivity, and low thermal stability still exist. The creation of hybrid or composite materials, doping, and structural alteration are some of the methods to get beyond these obstacles that are covered in the paper. The need for scalable, economical synthesis techniques and a better comprehension of the material's mechanical, optical, and electrical properties through modeling and experiments are emphasized.