Anomalous valley Hall effect in antiferromagnetic monolayers
Wenhui Du, Rui Peng, Zhonglin He, Ying Dai, Baibiao Huang, Yandong Ma
Abstract
Abstract Anomalous valley Hall (AVH) effect is a fundamental transport phenomenon in the field of condensed-matter physics. Usually, the research on AVH effect is mainly focused on 2D lattices with ferromagnetic order. Here, by means of model analysis, we present a general design principle for realizing AVH effect in antiferromagnetic monolayers, which involves the introduction of nonuniform potentials to break of PT symmetry. Using first-principles calculations, we further demonstrate this design principle by stacking antiferromagnetic monolayer MnPSe 3 on ferroelectric monolayer Sc 2 CO 2 and achieve the AVH effect. The AVH effect can be well controlled by modulating the stacking pattern. In addition, by reversing the ferroelectric polarization of Sc 2 CO 2 via electric field, the AVH effect in monolayer MnPSe 3 can be readily switched on or off. The underlying physics are revealed in detail. Our findings open up a new direction of research on exploring AVH effect.