AlGaN-Based Deep Ultraviolet Vertical-Cavity Surface-Emitting Laser
Zhongming Zheng, Yang Mei, Hao Long, Jason Hoo, Shiping Guo, Qingxuan Li, Leiying Ying, Zhi-Wei Zheng, Baoping Zhang
Abstract
An optically pumped AlGaN-based vertical-cavity surface-emitting laser (VCSEL) in the deep ultraviolet (DUV) range (<; 280 nm) is demonstrated. The lasing wavelength is 275.91 nm with a threshold power density of 1.21 MW/cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> and a linewidth of 0.78 nm. The lasing is believed to be benefited from high internal quantum efficiency (IQE) of the AlGaN-based multiple quantum wells (MQWs) and improved fabrication processes.
Topics & Concepts
Laser linewidthLasing thresholdOptoelectronicsMaterials scienceUltravioletLaserQuantum efficiencyQuantum wellVertical-cavity surface-emitting laserOpticsWavelengthPhysicsGaN-based semiconductor devices and materialsSemiconductor Lasers and Optical DevicesSemiconductor Quantum Structures and Devices