InGaAs HEMT MMIC Technology on Silicon Substrate with Backside Field-Plate
Arnulf Leuther, Laurenz John, R. Iannucci, Tim Christoph, R. Aidam, Thomas Merkle, A. Tessmann
Abstract
This paper presents a 20-nm gate length InGaAs HEMT MMIC technology on 100-mm Silicon substrates with nanostructured backside field-plate. Direct wafer bonding and wafer thinning is used to realize a 100 nm thick III/V device heterostructure on top of a SiO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> layer. The transistors offer an on-state and off-state breakdown voltage of 2.7 and 5.0 V, respectively together with a reduced output conductance of 83 mS/mm. Both parameters demonstrate an improvement by a factor of 2 compared to the IAF standard 20-nm mHEMT devices fabricated on GaAs substrates. For a prematched single-stage amplifier a transistor MSG/MAG of 7 dB was achieved at 300 GHz. Finally, the functionality of the backside field-plate was successfully demonstrated by a 300-GHz amplifier using a field-plate transistor in the output stage.