6G Roadmap for Semiconductor Technologies: Challenges and Advances
Ned Cahoon, P. Srinivasan, F Guarin
Abstract
The sub-THz spectrum between 100GHz and 300GHz is of great interest for achieving next generation 6G cellular network goals of ultra-high data rate, ultra-low latency and high sensing precision. Carrier frequencies >100GHz create significant challenges, including higher losses, lower semiconductor device performance, and a smaller per element physical area that constrains circuit size, integration, power and thermal management. Semiconductor technologies with transistor performance >500GHz are needed for improved efficiency, gain, noise and area at the front end of the 6G phased array radio. Advances in SiGe BiCMOS have the potential to increase silicon transistor performance while leveraging the cost and scale of mature high-volume silicon manufacturing for 6G sub-THz. Compound semiconductor technologies such as InP and GaN have the best front end performance at sub-THz. Advances in heterogeneous and monolithic integration with silicon are needed to address the cost and scale concerns of high frequency InP and GaN. A comprehensive approach to reliability is essential in order to extract maximum performance without sacrificing reliability.