Two-dimensional WS2 crystals at predetermined locations by anisotropic growth during atomic layer deposition
Benjamin Groven, Yoann Tomczak, Marc Heyns, Iuliana Radu, Annelies Delabie
Abstract
Anisotropic growth of two-dimensional (2D) tungsten disulfide (WS2) crystals occurs during atomic layer deposition (ALD) from WS2 seeds at predetermined locations on large area dielectric substrates. The number of ALD reaction cycles determines the lateral dimensions of the WS2 crystals. This 2D synthesis approach is compatible with temperature sensitive structures due to the low deposition temperature and can be extended to other 2D materials and heterostructures thereof. The crystallinity of the seed and the selectivity of ALD precursors toward seeds and underlying starting surface affect the structural quality of the 2D crystals.
Topics & Concepts
Atomic layer depositionTungsten disulfideCrystallinityAnisotropyMaterials scienceDeposition (geology)TungstenDielectricLayer (electronics)HeterojunctionCrystal growthChemical engineeringCrystallographyNanotechnologyChemical physicsOptoelectronicsChemistryOpticsComposite materialMetallurgySedimentPaleontologyPhysicsEngineeringBiology2D Materials and ApplicationsMXene and MAX Phase MaterialsPerovskite Materials and Applications