Polarity modulation in compositionally tunable Bi2O2Se thin films
Yong-Jyun Wang, Jianwei Zhang, Jianchu Chen, Haonan Wang, Saijun Wu, Cheng‐Yao Lo, J. I. Hong, Cheng-Yang Syu, Li-Syuan Hao, I-Sung Chen, Yuanchih Chang, Zhenzhong Yang, Rong Huang, Chun‐Liang Lin, Po‐Wen Chiu, Yu‐Lun Chueh, Yi-Cheng Chen, Chao‐Hui Yeh, Ying‐Hao Chu
Abstract
Two-dimensional (2D) materials have emerged as one of most promising candidates to meet the demands of beyond-silicon technology. Among 2D semiconductors, Bi2O2Se (BOSe) stands out as a channel material for advanced electronic applications, due to its high electron mobility and the formation of a native high-k dielectric layer. However, the fabrication of p-type 2D BOSe transistors remains challenging. Here, we report an area-selective doping method at low temperatures (~600 K, compatible with back-end-of-line processes) of pulsed laser deposited BOSe thin films, enabling the modulation of their carrier polarity via the introduction of Zn2+ substitutional dopants. Taking advantage of this doping strategy, we demonstrate the fabrication of a 2D vertical p-n homojunction with an on/off ratio in photoresponse of ~106 and planar transistors based on p-doped BOSe homojunctions. Our results help promoting the application of this material system towards the development of the next-generation electronics. Bi2O2Se is a promising 2D semiconductor with high electron mobility and native high-k dielectric layers, but its p-type doping remains challenging. Here, the authors report a low-temperature substitutional doping method to fabricate 2D Bi2O2Se p-n junctions and p-type transistors