Engineering energy bands in 0D–2D hybrid photodetectors: Cu-doped InP quantum dots on a type-III SnSe<sub>2</sub>/MoTe<sub>2</sub> heterojunction
Jiabin Li, Dongxue Wang, Xiya Chen, Ruhong Zhou, Huanteng Luo, Tu Zhao, Sheng Hu, Zhaoqiang Zheng, Wei Gao, Xiao Liu
Abstract
and a swift response time of 1.16 ms/1.14 ms with stable operation. These results demonstrate that energy band engineering of Cu-doped QDs can significantly enhance the performance of 2D type-III heterojunctions in the visible range, laying a foundation for future gate-tunable optoelectronic devices.
Topics & Concepts
HeterojunctionPhotodetectorDopingOptoelectronicsQuantum dotMaterials scienceChalcogenide Semiconductor Thin Films2D Materials and ApplicationsSemiconductor Quantum Structures and Devices