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Two-dimensional MoSi<sub>2</sub>As<sub>4</sub>-based field-effect transistors integrating switching and gas-sensing functions

Mi‐Mi Dong, Hang He, Chuan‐Kui Wang, Xiao‐Xiao Fu

2023Nanoscale22 citationsDOI

Abstract

). Our work provides theoretical guidance for the fabrication of multifunctional devices combining a high-performance FET and sensitive gas sensor.

Topics & Concepts

Field-effect transistorMaterials scienceTransistorField (mathematics)OptoelectronicsNanotechnologyEngineering physicsElectrical engineeringPhysicsEngineeringMathematicsVoltagePure mathematics2D Materials and ApplicationsNanowire Synthesis and ApplicationsMXene and MAX Phase Materials
Two-dimensional MoSi<sub>2</sub>As<sub>4</sub>-based field-effect transistors integrating switching and gas-sensing functions | Litcius