Highly Efficient Bule‐Emitting Bi‐Doped Cs<sub>2</sub>SnCl<sub>6</sub> Perovskite Variant: Photoluminescence Induced by Impurity Doping
Zhifang Tan, Jinghui Li, Cheng Zhang, Zha Li, Qingsong Hu, Zewen Xiao, Toshio Kamiya, Hideo Hosono, Guangda Niu, Efrat Lifshitz, Yi‐Bing Cheng, Jiang Tang
Abstract
Adv. Funct. Mater. 2018, 28, 1801131 In the initially published version of this article, the calculated formation enthalpies of the Bi-related impurities in Figure 5b and Figure S8 are incorrect. The errors were introduced when determining the chemical potentials of Bi dopant. The corrected Figure 5 and Figure S8 are given below. The text on page 5 “BiSn also can hardly form under the Sn4+-rich/Sn2+-poor conditions (i.e., in the high μSn regions C–F in the yellow region in Figure 5a) due to the too high ΔH values; but it can form under Sn4+-poor/Sn2+-rich conditions (in the low μSn regions A, B, and G), where the ΔH values are low and even negative.” should be revised as “BiSn also can hardly form under the Sn4+-rich/Sn2+-poor conditions (i.e., in the high ΔμSn region near points C–F in the yellow region in Figure 5a) due to the too high ΔH values; but it can form under Sn4+-poor/Sn2+-rich conditions (in the low ΔμSn region near point A), where the ΔH values are as low as 0.18 eV.” The text on page 6 “For example, as discussed in Figure 5b, simultaneous formation of VCl along with BiSn (i.e., defect complex) has almost the same ΔH as a simple substitution BiSn.” should be revised as “As shown in Figure 5b, simultaneous formation of VCl along with BiSn (i.e., defect complex) has lower ΔH than the simple substitution BiSn.” None of the conclusions of the main text are affected by this correction. The authors apologize for any inconvenience or misunderstanding that the errors may have caused.