2D MoS<sub>2</sub>-Based Threshold Switching Memristor for Artificial Neuron
Durjoy Dev, Adithi Krishnaprasad, Mashiyat Sumaiya Shawkat, Zhezhi He, Sonali Das, Deliang Fan, Hee‐Suk Chung, Yeonwoong Jung, Tania Roy
Abstract
In this work, we use a two-terminal 2D MoS <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> -based memristive device to emulate an artificial neuron. The Au/MoS <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> /Ag device exhibits volatile resistance switching characteristics with a low threshold voltage and a high ON-OFF ratio of 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">6</sup> , originating from an Ag diffusion-based filamentary process. The leaky integrate-and-fire neuron implemented with this device successfully emulates the key characteristics of a biological neuron.